| 1 |
no. 1
Properties of amorphous silicon
2nd ed. - London : INSPEC, Institution of Electrical Engineers , c1989
|
| 2 |
no. 2
Properties of gallium arsenide
2nd ed. - London : INSPEC, Institution of Electrical Engineers , c1990
|
| 3 |
no. 3
Properties of mercury cadmium telluride / editors, John Brice and Peter Capper
London : INSPEC, Institution of Electrical Engineers , c1987
|
| 4 |
no. 4
Properties of silicon
London : INSPEC, Institution of Electrical Engineers , c1988
|
| 5 |
no. 5
Properties of lithium niobate
London : INSPEC, Institution of Electrical Engineers , c1989
|
| 6 |
no. 6
Properties of indium phosphide
London : INSPEC, Institution of Electrical Engineers , c1991
|
| 7 |
no. 7
Properties of aluminium gallium arsenide / edited by Sadao Adachi
London : IEE Press , c1993
|
| 8 |
no. 8
Properties of lattice-matched and strained indium gallium arsenide / edited by Pallab Bhattacharya
London : INSPEC, Institution of Electrical Engineers , c1993
|
| 9 |
no. 10
Properties of narrow gap cadmium-based compounds / edited by Peter Capper
London : INSPEC, Institution of Electrical Engineers , c1994
|
| 10 |
no. 11
Properties of group III nitrides / edited by James H. Edgar
London : INSPEC, Institution of Electrical Engineers , c1994
|
| 11 |
no. 12
Properties of strained and relaxed silicon germanium / edited by Erich Kasper
London : INSPEC, Institution of Electrical Engineers , c1995
|
| 12 |
no. 13
Properties of silicon carbide / edited by Gary L. Harris
London : INSPEC, Institution of Electrical Engineers , c1995
|
| 13 |
no. 14
Properties of metal silicides / edited by Karen Maex and Marc van Rossum
London : INSPEC, Institution of Electrical Engineers , c1995
|
| 14 |
no. 15
Properties of III-V quantum wells and superlattices / edited by Pallab Bhattacharya
London : INSPEC, Institution of Electrical Engineers , c1996
|
| 15 |
no. 16
Properties of gallium arsenide / edited by M.R. Brozel and G.E. Stillman
3rd ed. - London : INSPEC, Institution of Electrical Engineers , c1996
|
| 16 |
no. 17
Properties of wide bandgap II-VI semiconductors / edited by Rameshwar Bhargava
London : INSPEC, Institution of Electrical Engineers , c1997
|
| 17 |
no. 18
Properties of porous silicon / edited by Leigh Canham
London : INSPEC, Institution of Electrical Engineers , c1997
|
| 18 |
no. 19
Properties of amorphous silicon and its alloys / edited by Tim Searle
London : INSPEC, Institution of Electrical Engineers , c1998
|
| 19 |
no. 20
Properties of crystalline silicon / edited by Robert Hull
London : INSPEC, Institution of Electrical Engineers , c1999
|
| 20 |
no. 21
Properties, processing and applications of indium phosphide / edited by T.P. Pearsall
London : INSPEC, Institution of Electrical Engineers , c2000
|
| 21 |
no. 22
Properties, processing and applications of glass and rare earth-doped glasses for optical fibres / edited by Dan Hewak
London : INSPEC, Institution of Electrical Engineers , c1998
|
| 22 |
no. 23
Properties, processing and applications of gallium nitride and related semiconductors / edited by James H. Edgar ... [et al.]
London : INSPEC, Institution of Electrical Engineers , c1999
|
| 23 |
no. 25
Physical properties of liquid crystrals : nematics / edited by David Dunmur, Atsuo Fukuda and Geoffery Luckhurst
London : INSPEC, Institution of Electrical Engineers , c2001
|
| 24 |
no. 26
Properties, growth and applications of diamond / edited by M.H. Nazaré and A.J. Neves
London : INSPEC, Institution of Electrical Engineers , c2001
|
| 25 |
no. 28
Properties of lithium niobate / edited by K.K. Wong
London : INSPEC, Institution of Electrical Engineers , c2002
|
| 26 |
no. 29
Properties of amorphous carbon / edited by S. Ravi P. Silva
London : INSPEC, Institution of Electrical Engineers , c2003
|
